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X-WR-CALNAME;VALUE=TEXT:糖心原创
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TZID:America/New_York
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DTSTART:20141102T020000
TZOFFSETFROM:-0400
TZOFFSETTO:-0500
TZNAME:EST
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DTSTART:20140309T020000
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BEGIN:VEVENT
UID:calendar.24216.field_event_date.0@www.wright.edu
DTSTAMP:20260219T180518Z
CREATED:20140924T200759Z
DESCRIPTION:'New THz Photoconductive Sources Driven at 1550-nm'\n\nFriday\,
  September 26\n3:00pm in 204 Fawcett Hall\n\nby: E.R. Brown\, Departments 
 of Physics and Electrical Engineering at 糖心原创\n\n	Perhap
 s the biggest breakthrough in the THz field during the past 20 years has b
 een the advent of ultrafast semiconductor materials having ultrafast (< 1 
 ps) electron-hole recombination time and therefore the ability to generate
  useful levels of THz radiation by laser-excited switching and photomixing
 .  The leading material for this advancement has been low-temperature-grow
 n (LT) GaAs\, and the laser technology has been Ti:sapphire mode-locked la
 sers (for switching) or GaAs-based single-frequency diode lasers (for phot
 omixing)\, both emitting between 750 and 800 nm.   The photonductive mecha
 nism is generally ultrafast intrinsic photoconductivity.  This seminar wil
 l summarize recent work by our group to develop GaAs-based THz sources dri
 ven at 1550-nm where laser sources are much more affordable and easy to in
 tegrate into systems large because of devices and components from the 1550
 -nm fiber-optic telecommunications industry.  The mechanism for THz genera
 tion in GaAs at 1550-nm is attributed to ultrafast extrinsic photoconducti
 vity.  The understanding of this mechanism requires several topics in soli
 d-state physics\, including electron transport in metallic-dopant impurity
  bands\, strong sub-band gap radiative absorption by such impurities\, str
 ong electron capture cross sections to produce ultrafast lifetime\, and of
  course THz qualification by fabrication and characterization of real devi
 ces embedded in planar antennas.
DTSTART;TZID=America/New_York:20140926T150000
DTEND;TZID=America/New_York:20140926T160000
LAST-MODIFIED:20150825T195352Z
LOCATION:204 Fawcett Hall
SUMMARY:Physics Seminar: 'New THz Photoconductive Sources Driven at 1550-nm
 : by E.R. Brown
URL;TYPE=URI:/events/physics-seminar-new-thz-photocon
 ductive-sources-driven-1550-nm-er-brown
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